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- W2007434579 abstract "In this study, mobility lowering inherent to ultrathin gate oxides is experimentally examined in the silicon metal-oxide-semiconductor (Si MOS) inversion layer, and additional scattering mechanisms associated with gate oxide scaling are discussed, paying attention to the extraction of reliable experimental data on inversion-layer mobility. It is found that poly-Si-gate impurity concentration strongly affects the mobility lowering associated with ultrathin gate oxides, which is quantitatively discriminated from that of Coulomb scattering due to substrate impurities and interface states. This finding indicates the contribution of remote Coulomb scattering due to the gate impurities. In addition, low-temperature measurements reveal that roughness scattering is enhanced, possibly because of the poor Si/SiO 2 interface in the initial stage of oxide growth. Therefore, further gate oxide scaling down to 1.5 nm or less can cause remote Coulomb scattering as well as enhanced roughness scattering, resulting in the saturation or decrease in the drive current capability." @default.
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- W2007434579 date "2004-04-01" @default.
- W2007434579 modified "2023-10-18" @default.
- W2007434579 title "Quantitative Examination of Mobility Lowering Associated with Ultrathin Gate Oxides in Silicon Metal-Oxide-Semiconductor Inversion Layer" @default.
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