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• W2007438922 abstract "The crystallization of amorphous ultrahigh-vacuum-deposited Si films on Si(111)−7 × 7 is investigated by low energy electron diffraction (LEED) and transmission electron microscopy. The substrate temperature during deposition is 150 °C; the deposition rate is 100 Å/min and the film thickness is 50 to 1200 Å. The films are annealed in the temperature range from 575 to 1000 °C. The crystallization is controlled by LEED observation. The epitaxial regrowth mechanism and the origin of residual disorder in layers annealed at 600 to 800 °C are determined. Epitaxial alignment of the polycrystalline regions of the film is shown to occur at elevated temperatures (900 to 1000 °C). [Russian Text Ignore]" @default.
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• W2007438922 date "1982-07-16" @default.
• W2007438922 modified "2023-09-26" @default.
• W2007438922 title "Epitaxial Regrowth of Amorphous Si Deposited on Si(111)" @default.
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• W2007438922 doi "https://doi.org/10.1002/pssa.2210720140" @default.
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