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• W2007457913 abstract "Radiation damage after high energy ion irradiation of silicon at temperatures up to 475 K has been investigated by optical reflectivity depth profiling. The damage development with dose is determined by different microprocesses, which are due to the thermal and structural relaxation of energy-spikes. A damage generation model taking these microprocesses into account [N. Hecking et al., Nucl. Instr. Methods B 15 (1986) 760] has been successfully applied to describe the dose and temperature dependent accumulation of damage for different ion species in silicon. The dependence of model-parameters on irradiation temperature is analysed in detail. In case of higher irradiation temperatures and lower doses, the decrease of damage with increasing temperature is found to follow an Arrhenius expression. The activation energy, determined from these results, corresponds to a value for the migration and annealing of doubly negatively charged vacancies. At higher doses, the stimulated growth of amorphous regions is the dominant mechanism. High concentrations of implanted impurity ions have a strong influence on the amorphization process. This can be attributed to changes of spike-crystallization. Model parameters for calculation of complete depth profiles of radiation damage are estimated by combination of corresponding values for maximum damage with calculated profiles of ion energy loss from Monte Carlo simulation." @default.
• W2007457913 created "2016-06-24" @default.
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• W2007457913 date "1989-12-01" @default.
• W2007457913 modified "2023-09-23" @default.
• W2007457913 title "Modelling of lattice damage accumulation during high energy ion implantation" @default.
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• W2007457913 doi "https://doi.org/10.1016/0169-4332(89)90195-5" @default.
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