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- W2007495599 abstract "The drift mobility of two-dimensional electron gasses in N-polar GaN/AlGaN/GaN heterostructures was measured with capacitance and resistance measurements using gated transmission line method structures. A decrease in mobility with increasing reverse bias of the gate was observed. A variational wave function was used to calculate the mobility limited by optical phonon, alloy disorder, and ionized impurity scattering as a function of gate bias, and found to match the experimental data well. Three distinct regimes where phonon, alloy, and impurity scattering are dominant were observed." @default.
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- W2007495599 date "2008-07-28" @default.
- W2007495599 modified "2023-09-23" @default.
- W2007495599 title "Electron mobility in N-polar GaN/AlGaN/GaN heterostructuress" @default.
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- W2007495599 doi "https://doi.org/10.1063/1.2965483" @default.
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