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• W2007505218 abstract "One-dimensional nanostructures of direct-forbidden semiconductor SnO2 crystallite have been prepared in large scale via thermal evaporation of tin monoxide at 1100 °C. The anomalous optical emission even lasing phenomena are observed below the band edge under pulsed laser excitation, which usually does not occur for a direct-forbidden band semiconductor. Scanning electron microscopy, X-ray powder diffraction, transmission electron microscopy, UV−vis reflectance spectroscopy, and Raman scattering spectra were used to characterize the as-synthesized products. The processes of multiphonon coupling with exciton dominate in the exciton transition and lasing. The enhancement of exciton−phonon coupling and bound exciton transition could be mapped in the phonon scattering process. The origin of photoluminescence and lasing of SnO2 nanobelts and nanowires was illustrated." @default.
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• W2007505218 date "2009-01-08" @default.
• W2007505218 modified "2023-10-01" @default.
• W2007505218 title "Bound Exciton and Optical Properties of SnO₂ One-Dimensional Nanostructures" @default.
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• W2007505218 doi "https://doi.org/10.1021/jp808422a" @default.
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