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- W2007564116 abstract "We have investigated the strain relaxation mechanisms in short-period polar GaN/AlN superlattices deposited by plasma-assisted molecular-beam epitaxy, and designed to display intersubband transitions at 1.55 μm. In a first stage, we have identified the growth conditions to minimize strain relaxation, using a Ga excess to reduce the (0001) surface free energy of both GaN and AlN. Under these growth conditions, crack propagation is not observed, even for the tensile-strained superlattices grown on GaN templates. The initial misfit relaxation in the vicinity of the buffer occurs by the formation of a-type dislocations. The final strain state of the superlattice, reached after 10–20 periods, is independent of the substrate (either GaN or AlN templates). Once the steady-state conditions are reached, we observe a periodic partial relaxation of quantum wells and barriers. High-resolution transmission electron microscopy indicates that the periodic relaxation can be related to the presence of basal and prismatic stacking faults creating clusters with an in-plane length of tens of nanometers. The effect of these defects on the optical performance of the superlattices is discussed by simulation of electronic structure using an 8×8 k⋅p Schrödinger–Poisson solver. In the presence of basal stacking faults at the quantum well interfaces, the deviation of the e1-e2 intersubband transition with respect to the nominal value is expected to be smaller than the measured absorption line width." @default.
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- W2007564116 date "2009-07-01" @default.
- W2007564116 modified "2023-10-18" @default.
- W2007564116 title "Strain relaxation in short-period polar GaN/AlN superlattices" @default.
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- W2007564116 doi "https://doi.org/10.1063/1.3168431" @default.
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