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• W2007571805 abstract "The Ti-doped Al 2 O 3 (Al 2 O 3 :Ti) films were prepared by simultaneous RF magnetron sputtering of Al 2 O 3 and DC magnetron sputtering of Ti. The advantage of this method is that the Ti content could be independently controlled. Decreasing the DC power or increasing the ratio of O 2 to Ar pressure made the Al 2 O 3 :Ti film be more stoichiometric. By decreasing the DC power or increasing the ratio of O 2 to Ar pressure, the hydrophilic Al 2 O 3 :Ti film exhibited lower surface roughness, higher average visible transmission, higher linear refractive index and lower stress-optical coefficient. • Low DC power or high oxygen pressure made the Al 2 O 3 :Ti film be more stoichiometric. • Increasing the DC power made the hydrophilic Al 2 O 3 :Ti film be rougher. • High visible transmission was obtained at low DC power or high oxygen pressure. • High linear refractive index was obtained at low DC power or high oxygen pressure." @default.
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• W2007571805 date "2014-09-01" @default.
• W2007571805 modified "2023-09-26" @default.
• W2007571805 title "Properties of Ti-doped Al2O3 thin films deposited by simultaneous RF and DC magnetron sputtering" @default.
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• W2007571805 doi "https://doi.org/10.1016/j.vacuum.2014.02.010" @default.
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