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• W2007573775 abstract "A unified approach to the modeling, simulation, and control of thin film processing is presented. The focus of this approach is to combine in-situ sensing with a model that deals directly with evolving surfaces. Using this method, and an in-situ process modeling technique (e.g., plasma emission spectroscopy during reactive ion etching) is used as a source of in/out data for a model which deals exclusively with interface evolution. In this way, in-situ monitoring gives predictive process control capability, rather than simple end-point detection." @default.
• W2007573775 created "2016-06-24" @default.
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• W2007573775 date "1997-08-25" @default.
• W2007573775 modified "2023-09-23" @default.
• W2007573775 title "<title>Real-time control of etching processes: experimental results</title>" @default.
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• W2007573775 doi "https://doi.org/10.1117/12.284645" @default.
• W2007573775 hasPublicationYear "1997" @default.
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