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• W2007604864 abstract "A new plasma process, i.e. a combination of plasma immersion ion implantation and deposition (PIII&D) and high power impulse magnetron sputtering (HiPIMS), was developed to implant non-gaseous ions into material surfaces. The new process has the great advantage that thin film deposition and non-gaseous ion implantation can be achieved in a single plasma chamber. In this study, Ge ions were successfully implanted into SiO(2) thin film, which resulted in uniformly and homogeneously distributed crystalline Ge quantum dots (Ge-QDs) embedded in a SiO(2) matrix even without a further annealing process. Broader areas of application of PIII&D technology are envisaged with this newly developed process." @default.
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• W2007604864 date "2011-06-06" @default.
• W2007604864 modified "2023-09-23" @default.
• W2007604864 title "Crystalline Ge quantum dots embedded in SiO₂matrix synthesized by plasma immersion ion implantation" @default.
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• W2007604864 doi "https://doi.org/10.1088/0957-4484/22/28/285605" @default.
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