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- W2007609621 abstract "Core level photoemission measurements have been made for thin (40 Å) AlSb heterojunctions grown on ZnTe. The room temperature valence band offset we obtain is 0.35±0.11 eV and the heterojunction is type I (electrons and holes confined in AlSb). The Γ(ZnTe)–Δ(AlSb) conduction-band offset would then be 0.28 eV. The AlSb growth temperature was reduced to 325 °C in order to suppress interfacial reactions. Raman scattering indicates good crystalline quality for this growth temperature. Heterojunctions annealed in vacuo at 375 °C exhibit interfacial reactions which liberate elemental Te or possibly Al2Te3." @default.
- W2007609621 created "2016-06-24" @default.
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- W2007609621 date "1990-07-01" @default.
- W2007609621 modified "2023-09-26" @default.
- W2007609621 title "Band offset measurements for AlSb/ZnTe heterojunctions" @default.
- W2007609621 doi "https://doi.org/10.1116/1.585004" @default.
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