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- W2007651104 abstract "High growth rate deposition of μc-Si:H film with VHF-PECVD at low temperature has been reported. Investigations showed that growth rates enhanced with higher excitation frequency and working pressure, but increased at first then decreased with the increase of plasma power. Optical emission spectroscopy (OES) was introduced to monitor VHF plasma. The relationship between the growth rates and the OES results has been discussed. Raman spectra were also used to study the a-Si:H/μc-Si:H phase transition. Finally a high growth rate of 2.0nm/s has been obtained through the initially optimized condition." @default.
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- W2007651104 date "2002-11-20" @default.
- W2007651104 modified "2023-10-16" @default.
- W2007651104 title "HIGH GROWTH-RATE DEPOSITION OF μc-Si:HTHIN FILM AT LOW TEMPERATURE WITH VHF-PECVD" @default.
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- W2007651104 doi "https://doi.org/10.1142/s0217979202015212" @default.
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