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- W2007654924 abstract "ZnO thin films were synthesized on Si substrates by MOCVD using diethyl zinc as a precursor. Effects of O2/DEZ gas mixing ratio on the growth rate, surface morphology, preferred orientation, and electrical properties of the ZnO thin films were investigated with SEM, XRD, and Hall measurement. The surface reflectance variations of ZnO thin films were analyzed using laser-photometer apparatus. As the O2/DEZ mixing ratio increased, growth rate and I(002)/I(101) in XRD of ZnO thin films decreased, and the crystal structure was changed from columnar to planar structure. All ZnO films deposited at various CVD conditions exhibited c-axis (002) plane preferred orientation. The electrical properties of ZnO thin films mainly depended on the carrier mobility." @default.
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- W2007654924 date "2013-02-01" @default.
- W2007654924 modified "2023-09-23" @default.
- W2007654924 title "Effects of Gas Mixing Ratio on the Properties of Thin Films in the ZnO Synthesis by MOCVD" @default.
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- W2007654924 doi "https://doi.org/10.4313/jkem.2013.26.2.109" @default.
- W2007654924 hasPublicationYear "2013" @default.
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