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- W2007662224 abstract "A novel high RF power MOSFET was developed to integrate a high-power amplifier into 45 nm node CMOS technology. A self-aligned silicide and laterally modulation-doped channel attained the lowest on-resistance of 1.7 Omega-mm with a high breakdown voltage of more than 10 V and successfully achieved the highest output power density of 0.6 W/mm at the maximum power-added efficiency ever reported among CMOS high breakdown voltage transistors. The reduced gate resistance led to a high frequency characteristic of 43 GHz f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>max</sub> . We also confirmed that the optimized profile of a gate-overlapped lightly doped drain provides sufficient HC and TDDB reliabilities with a gate oxide as thin as a 3.3 V I/O transistor. These results indicate that a single-chip CMOS transceiver with a high-power amplifier can be produced in advanced CMOS fabs." @default.
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- W2007662224 date "2008-12-01" @default.
- W2007662224 modified "2023-09-23" @default.
- W2007662224 title "High RF power transistor with laterally modulation-doped channel and self-aligned silicide in 45nm node CMOS technology" @default.
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- W2007662224 doi "https://doi.org/10.1109/iedm.2008.4796723" @default.
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