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- W2007679888 abstract "Tin-doped indium oxide (ITO) films were deposited by sputtering of sintered oxide targets, employing an electron cyclotron resonance (ECR) microwave plasma system. The effects of Ar ion bombardment on crystallographic and electrical properties of the films were investigated with control of the ion energy by submagnetic field application. It was found that ion bombardment with energies lower than ∼ 40 eV enhances crystallization whereas bombardment with higher energies suppresses crystallization. The surface roughness of the film was below 50 Å. The smooth surface formation could be attributed to the microstructural modification arising from ion bombardment." @default.
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- W2007679888 date "1994-09-01" @default.
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- W2007679888 title "Effects of Magnetic Field Gradient on Crystallographic Properties in Tin-Doped Indium Oxide Films Deposited by Electron Cyclotron Resonance Plasma Sputtering" @default.
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- W2007679888 doi "https://doi.org/10.1143/jjap.33.4997" @default.
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