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- W2007697115 abstract "The long exponential absorption tail near the fundamental absorption edge occuring in weakly damaged ion implanted GaAs is investigated in dependence on the ion species (N+, Ar+, Zn+, and Cd+ ions are used) and on the ion fluence. The results show that characteristic native defects are responsible for the observed absorption behaviour. The near edge absorption coefficient as well as the characteristic tailing energy increase with the energy density deposited in nuclear processes and reach both a maximum value for a critical energy density. From the optical measurements and considering the results of temperature dependent RBS measurements conclusions are made concerning the nature of defects in the weakly damaged GaAs layers. Der exponentielle Absorptionsausläufer im Bereich der Fundamentalabsorptionskante schwach geschädigter ionenimplantierter GaAs-Schichten wird in Abhängigkeit von der Art der implantierten Ionen (N+, Ar+, Zn+, Cd+) und von der Ionendosis untersucht. Die Ergebnisse zeigen, daß das beobachtete Absorptionsverhalten im bandkantennahen Bereich durch charakteristische Eigendefekte verursacht wird. Sowohl der Absorptionskoeffizient als auch die mit dem Anstieg des Absorptionslausäufers verknüpfte charakteristische Energie nehmen mit wachsender nuklear deponierter Energiedichte zu und erreichen Maximalwerte für eine kritische Energiedichte. Aus den Ergebnissen der optischen Messungen und unter Berücksichtigung von Resultaten temperaturabhängiger RBS-Messungen werden Schlußfolgerungen bezüglich der Natur der Defekte in schwach geschädigten GaAs-Schichten gezogen." @default.
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- W2007697115 date "1986-01-16" @default.
- W2007697115 modified "2023-10-16" @default.
- W2007697115 title "Near-Edge Optical Absorption Behaviour in Weakly Damaged Ion-Implanted GaAs" @default.
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- W2007697115 doi "https://doi.org/10.1002/pssa.2210930126" @default.
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