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• W2007701784 abstract "We have determined the structure of inverted hexagonal pyramid defects (IHPs) in multiple quantum wells InGaN/GaN by high-angle annular dark-field scanning transmission electron microscopy (HAADF STEM). HAADF STEM images reveal definitely that the IHP nucleates at a threading dislocation and grows in the form of a thin six-walled structure with InGaN/GaN {101̄1} layers. It has been found that IHPs start even at In-rich dots under adverse growth conditions." @default.
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• W2007701784 date "2003-02-03" @default.
• W2007701784 modified "2023-10-01" @default.
• W2007701784 title "Formation and structure of inverted hexagonal pyramid defects in multiple quantum wells InGaN/GaN" @default.
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• W2007701784 doi "https://doi.org/10.1063/1.1542683" @default.
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