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• W2007702389 endingPage "01AC06" @default.
• W2007702389 startingPage "01AC06" @default.
• W2007702389 abstract "The synthesis of Ti–Si–C thin films by magnetron sputtering was examined using elemental targets of titanium, silicon, and carbon in order to investigate the effects of the carbon content in the films on the formation of carbide compounds such as TiC x and/or Ti 3 SiC 2 . The thin films were deposited on silicon substrates heated to approximately 800 °C in an atmosphere of argon. By performing X-ray diffractometry (XRD) measurements, it was found that a Ti 3 SiC 2 phase as well as a TiC x phase were formed in the film obtained at a DC electric power of 200 W, while only a TiC x phase formed at a DC electric power of 300 W and above. The electrical resistivity of the films decreased with decreasing electric power supplied to the carbon target, which was attributed to the formation of the Ti 3 SiC 2 phase in the film. A noteworthy electric resistivity of less than 80 µΩ cm was achieved." @default.
• W2007702389 created "2016-06-24" @default.
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• W2007702389 date "2012-01-01" @default.
• W2007702389 modified "2023-09-25" @default.
• W2007702389 title "Preparation of MAX-Phase-Containing Ti–Si–C Thin Films by Magnetron Sputtering Using Elemental Targets" @default.
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• W2007702389 doi "https://doi.org/10.1143/jjap.51.01ac06" @default.
• W2007702389 hasPublicationYear "2012" @default.
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