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- W2007755786 abstract "An investigation of strongly polarized lines in the spectra of epitaxially grown ZnSe films is presented. From the observed dependence of the polarization with the sample thickness, 〈1 1 0〉 aligned extended defects are identified. For the thinnest ZnSe films the defects associated with the Y line form first in the [1 1 0] direction. From this observation, we suggest that these defects are directly correlated with misfit dislocations. However, an asymmetry in the residual strain is not detected in these samples. In 2 μm thick nitrogen-doped ZnSe films, a considerable polarization of all lines associated with the nitrogen acceptor is observed while the Y line is not polarized. Linearly polarized luminescence is thus a sensitive optical tool to characterize structural defects in ZnSe films." @default.
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- W2007755786 date "1998-02-01" @default.
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- W2007755786 title "〈1 1 0〉-uniaxial local strain in epitaxially grown ZnSe on (001)-oriented GaAs" @default.
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- W2007755786 doi "https://doi.org/10.1016/s0022-0248(98)80104-8" @default.
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