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- W2007757411 abstract "Abstract The etching behaviour of silicon in chlorine atmosphere assisted by laser radiation at 248 nm has been studied as a function of laser fluence and gas pressure. Different process regions have been determined. The crystalline quality and the surface morphology and roughness have been investigated by transmission electron microscopy and secondary ion mass spectroscopy." @default.
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- W2007757411 title "Excimer-laser-induced etching of silicon in chlorine atmosphere at a wavelength of 248 nm" @default.
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- W2007757411 doi "https://doi.org/10.1016/0169-4332(94)00440-4" @default.
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