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- W2007771640 abstract "Erbium-doped Si nanocrystal based optical waveguides were formed by Er and Si ion implantation into SiO2. Optical images of the waveguide output facet show a single, well-confined optical mode. Transmission measurements reveal a clear Er related absorption of 2.7 dB/cm at 1.532 μm, corresponding to a cross section of 8×10−20 cm2. The Si nanocrystals act as sensitizers for Er but under high doping conditions (∼50 Er ions per nanocrystals) no pump-induced change in the Er related absorption is observed under optical pumping (λ=458 nm), which is ascribed to an Auger quenching effect. For very high pump powers, a broad absorption feature is observed, attributed to free carrier absorption." @default.
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- W2007771640 date "2002-01-01" @default.
- W2007771640 modified "2023-10-16" @default.
- W2007771640 title "Gain limiting processes in Er-doped Si nanocrystal waveguides in SiO2" @default.
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- W2007771640 doi "https://doi.org/10.1063/1.1418417" @default.
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