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• W2007843742 abstract "Ultrahigh-voltage silicon carbide (SiC) devices [p-i-n diodes and insulated-gate bipolar transistors (IGBTs)] and switching test have been investigated. As a result, we have succeeded in developing a 13-kV p-i-n diode, 15-kV p-channel IGBT, and 16-kV flip-type n-channel implantation and epitaxial IGBT with a low differential specific on-resistance ( <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>R</i> <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$_{rm diff,on}$ </tex-math></inline-formula> ). It was revealed that a power module fabricated using a nanotech resin, Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> ceramic substrate, and W base plate was suitable for ultrahigh voltage and high temperature. A switching test was carried out using a clamped inductive load circuit, which indicated that the energy loss of a circuit with ultrahigh-voltage SiC devices is lower than that of Si devices." @default.
• W2007843742 created "2016-06-24" @default.
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• W2007843742 date "2015-02-01" @default.
• W2007843742 modified "2023-09-28" @default.
• W2007843742 title "Development of Ultrahigh-Voltage SiC Devices" @default.
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• W2007843742 doi "https://doi.org/10.1109/ted.2014.2357812" @default.
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