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- W2007848614 abstract "We report the material and electrical properties of CoSi2 and NiSi2 contacts to n-type 4H-SiC depending on the post-annealing and the metal covering conditions. Ni/Si/Ni and Co/Si/Co films were separately sputtered on 4H-SiC substrates for obtaining the Ni and Co silicides, followed by annealing at 800 °C in Ar:H2 (9:1) gas ambient. Results of the specific surface resistivity measurements show that the resistivity of the Co-based metal contact was one order lower than that of the Ni-based contact. The specific contact resistance was measured by a transmission line technique, and the specific contact resistivity of 1.5×10−6 Ω cm2 is obtained for Co/Si/Co metal structures after a two-step annealing at 550 °C for 10 min and 800 °C for 3 min. The physical properties of the contacts were examined by using XRD and AES, and the results indicate that the Co-based metal contacts have better structural stability of silicide phases formed after the high temperature annealing." @default.
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- W2007848614 date "2004-04-01" @default.
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- W2007848614 title "Study of Co- and Ni-based ohmic contacts to n-type 4H-SiC" @default.
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- W2007848614 doi "https://doi.org/10.1016/j.diamond.2003.10.067" @default.
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