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- W2007876750 abstract "Photoluminescence and cathodoluminescence have been used to investigate the strain in GaAs/AlGaAs multiquantum well structures grown on a thick GaAs buffer layer on a patterned silicon substrate. By growing the epitaxial GaAs only on ‘‘islands’’ of Si the density of microcracks is reduced by nearly two orders of magnitude. Although the biaxial tension is reduced in the vicinity of a microcrack, the strain is almost eliminated at the island edges. Strain is still present in the center of the islands but reduces with decreasing island size offering the possibility of relatively strain and microcrack free, small area optical devices on silicon substrates." @default.
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- W2007876750 date "1993-06-07" @default.
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- W2007876750 title "Optical emission from GaAs/AlGaAsp‐i‐nmultiquantum well structures grown on patterned Si substrates" @default.
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- W2007876750 doi "https://doi.org/10.1063/1.109200" @default.
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