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• W2007888840 abstract "A sequential layered integration technology that can fabricate 3D stackable epi-like Si FETs with and without metal back gate (MBG) under sub-400°C are proposed in this article. With laser crystallized epi-like Si and CMP thinning processes for channel fabrication, 3D stackable ultra thin body (UTB) n/p-MOSFETs with low-subthreshold swings (88 and 121 mV/dec.) and high on-currents (121 and 62 μA/μm) are demonstrated. With additional metal back gate structure, UTB devices can be desirably operated in a positive or negative threshold voltage range with γ values of 0.51 (n-MOSFETs) and 0.56 (p-MOSFETs) for favoring its applications in 3D logic circuits. In addition, such thin and high quality channel and metal back gate scheme is not only promising for conventional p-n junction device but also junctionless (JL) scheme, which can simplify the fabrication and achieve further scaling." @default.
• W2007888840 created "2016-06-24" @default.
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• W2007888840 date "2013-12-01" @default.
• W2007888840 modified "2023-10-18" @default.
• W2007888840 title "Record-high 121/62 &#x03BC;A/&#x03BC;m on-currents 3D stacked epi-like Si FETs with and without metal back gate" @default.
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• W2007888840 doi "https://doi.org/10.1109/iedm.2013.6724719" @default.
• W2007888840 hasPublicationYear "2013" @default.
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