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• W2008006429 abstract "The ternary nitride TiZrN thin films were deposited by reactive DC Magnetron co-sputtering technique with different titanium sputtering current (ITi) ranging from 0.6 to 1.2 A, using individual Ti and Zr co-sputtered targets at constant deposition time. The Ar to N2 flow rate ratio was fixed at 8:6 sccm. The crystal structure, surface morphology microstructure and element compositions were investigated by X-ray diffraction (XRD), Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FE-SEM). It was found that the crystal structure, surface morphology, microstructure and element compositions of the films are strongly dependent on the deposition parameters. All the films are composed of TiZrN crystal structure (111) (200) and (220) planes with preferred orientation of (200) plane. The crystallinity of the films changed as a function of Ti sputtering currents. The AFM measurement indicated that the coarse and congregate grain with increasing of ITi were not only enhanced root mean square roughness (Rrms) from 2.7 to 11.6 nm, but also increases average thickness continuously from 347.1 nm to 751.8 nm. With the increase of ITi the atomic ratio of Ti to Zr elements and the N to (Ti + Zr) ratio increased to 0.9 and 1.6, respectively." @default.
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• W2008006429 date "2012-01-01" @default.
• W2008006429 modified "2023-09-27" @default.
• W2008006429 title "Characterization of Nanostructured TiZrN Thin Films Deposited by Reactive DC Magnetron Co-sputtering" @default.
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• W2008006429 doi "https://doi.org/10.1016/j.proeng.2012.01.1310" @default.
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