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- W2008010943 abstract "High-quality nonpolar m-plane InGaN/GaN multiple quantum wells (MQWs) have been deposited on LiGaO2(100) substrates by the combination of pulsed laser deposition (PLD) and molecular beam epitaxy (MBE) technologies. This work opens up a new prospect for achieving high-efficiency nonpolar m-plane GaN-based devices." @default.
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- W2008010943 date "2014-01-01" @default.
- W2008010943 modified "2023-10-16" @default.
- W2008010943 title "Deposition of nonpolar m-plane InGaN/GaN multiple quantum wells on LiGaO<sub>2</sub>(100) substrates" @default.
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- W2008010943 doi "https://doi.org/10.1039/c3tc31935k" @default.
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