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- W2008020105 abstract "Abstract The forward current-voltage characteristics of metal-thin epitaxial silicon diodes were measured for the contact metals titanium, cerium, molybdenum and vanadium. The measurements were made for circular junctions, with diameters varying between 0·89 × 10 −3 cm and 4·6 × 10 −3 cm, at temperatures between −74°C and 150°C. It was found that the diodes did not obey Schottky theory, but that their current-voltage characteristics contained a leakage component that persisted until high forward biases had been attained. The behavior of the leakage component was described in terms of the degree of epitaxial depletion. At high forward biases, Schottky behavior was apparently restored." @default.
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- W2008020105 date "1971-11-01" @default.
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- W2008020105 title "Anomalous forward characteristics of a metal-thin epitaxial silicon junction" @default.
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- W2008020105 doi "https://doi.org/10.1016/0038-1101(71)90017-7" @default.
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