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• W2008027055 abstract "Physical and electrical properties of HfSiON that make this material desirable as the gate dielectric in a standard metal–oxide–semiconductor flow are reported. Sputtering was used to deposit films with minimal low dielectric constant interface layers, equivalent oxide thicknesses below 13 Å, and leakage current density at least two orders of magnitude lower than SiO2. The presence of nitrogen in the film enhances the thermal stability relative to HfSiO, and no crystallization was observed for anneals up to 1100 °C." @default.
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• W2008027055 date "2002-04-22" @default.
• W2008027055 modified "2023-10-17" @default.
• W2008027055 title "Application of HfSiON as a gate dielectric material" @default.
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• W2008027055 doi "https://doi.org/10.1063/1.1476397" @default.
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