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- W2008030175 abstract "Using an improved Maszara test we have shown that post anneal bond strength of radical activated wafers and plasma activated wafers varies by up to 50% across the entire wafer surface. We have shown that this is independent of the wafer pre-treatment, the microscale surface geometry and any discontinuities visible in the post anneal infrared transmission image." @default.
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- W2008030175 date "2012-05-01" @default.
- W2008030175 modified "2023-09-23" @default.
- W2008030175 title "Variable bond strength in low temperature directly bonded wafers" @default.
- W2008030175 cites W2021990479 @default.
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- W2008030175 doi "https://doi.org/10.1109/ltb-3d.2012.6238073" @default.
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