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• W2008040432 abstract "We investigate the gate controlled direct band-to-band tunneling (BTBT) current in monolayer transition-metal dichalcogenide (MX <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ) channel-based tunnel field effect transistor (TFET). Five MX <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> materials (MoS <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ,MoSe <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ,MoTe <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ,WS <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ,WSe <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ) in their 2-D sheet forms are considered for this purpose. We first study the real and imaginary band structure of those MX <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> materials by density-functional theory (DFT), which is then used to evaluate the gate-controlled current under the Wentzel-Kramers-Brillouin (WKB) approximation. It is shown that all five MX <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> support direct BTBT in their monolayer sheet forms and offer an average ON current and subthreshold slope of 150 μA/μm (at V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>d</sub> =0.1 V) and 4 mV/dec, respectively. Furthermore, we also demonstrate the strain effect on the complex band structures and the performances of MX <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> based TFETs. It is observed that a certain tensile strain becomes favorable for the improvement of ON-current performances." @default.
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• W2008040432 title "Monolayer Transition Metal Dichalcogenide Channel-Based Tunnel Transistor" @default.
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