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• W2008043697 abstract "Addressed herein is a facile method for the preparation of magnetic graphene oxide–Fe3O4 (GO–Fe3O4) nanocomposites and the rectifying properties of (GO–Fe3O4)/p-Si junction in a Schottky diode. GO–Fe3O4 nanocomposites were prepared by a novel method in which as-prepared GO sheets were decorated with the monodisperse Fe3O4 nanoparticles (NPs) in dimethylformamide/chloroform mixture via a sonication process. The successful assembly of Fe3O4 NPs onto GO sheets was displayed by transmission electron microscopy (TEM). Inductively couple plasma optical emission spectroscopy (ICP-OES) analysis of the GO–Fe3O4 nanocomposite showed that the nanocomposite consists of 20.1 wt% Fe3O4 NPs which provides a specific saturation magnetization (Ms) as 16 emu/g. The current–voltage (I–V) characteristics of the (GO–Fe3O4)/p-Si junction in a Schottky diode were studied in the temperature range of 50–350 K in the steps of 25 K. It was determined that the barrier height and ideality factor of the Au/GO–Fe3O4/p-Si/Al Schottky diode were depended on temperature as the barrier height increased while the ideality factor decreased with increasing temperature. The experimental values of barrier height and ideality factor were varied from 0.12 eV and 11.24 at 50 K to 0.76 eV and 2.49 at 350 K, respectively. The Richardson plot exhibited non-linearity at low temperatures that was attributed to the barrier inhomogeneities prevailing at the GO–Fe3O4/p-Si junction." @default.
• W2008043697 created "2016-06-24" @default.
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• W2008043697 date "2014-02-01" @default.
• W2008043697 modified "2023-10-16" @default.
• W2008043697 title "A new route for the synthesis of graphene oxide–Fe3O4 (GO–Fe3O4) nanocomposites and their Schottky diode applications" @default.
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• W2008043697 doi "https://doi.org/10.1016/j.jallcom.2013.09.159" @default.
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