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• W2008045141 abstract "We report on temperature-dependent differential Hall-effect and resistivity measurements, between 10 and 300 K, on two Si-doped GaN epitaxial layers grown by MOCVD on sapphire substrates. These experiments indicate parallel conduction paths in our layers, while depth profiling using plasma-etching shows that two paths are simultaneously present: an impurity band in the Si-doped region and a conducting layer at the GaN/sapphire interface." @default.
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• W2008045141 date "2001-11-01" @default.
• W2008045141 modified "2023-09-26" @default.
• W2008045141 title "Simultaneous Impurity-Band and Interface Conduction in Depth-Profiled n-GaN Epilayers" @default.
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• W2008045141 doi "https://doi.org/10.1002/1521-3951(200111)228:2<579::aid-pssb579>3.0.co;2-n" @default.
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