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- W2008045197 abstract "The piezoresistive properties of thin polycrystalline and crystalline boron-doped silicon films on thermally oxidized silicon substrates are reported, based on their calculated and measured gauge factors. A simple theoretical model for calculating the longitudinal and transverse gauge factors, including grain size, crystallite orientation and doping dependence, is described. Boron doping concentrations in the range 5 × 1018 cm−3 to 1 × 1020 cm−3 have been investigated. Predictions of gauge factors using our model give good agreement with experimental results. Maximum gauge factors of K1 ≅ 37 and Kt ≅ −9 for polycrystalline silicon with grain sizes of about 120 nm were obtained at doping concentrations of about 1 × 1019 cm−3. In the case of completely crystalline silicon films, the advantages of SOI technology are combined with excellent piezoresistive properties comparable to those of usual piezoresistors in monocrystalline silicon devices." @default.
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- W2008045197 date "1987-03-01" @default.
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- W2008045197 title "Piezoresistive properties of polycrystalline and crystalline silicon films" @default.
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- W2008045197 doi "https://doi.org/10.1016/0250-6874(87)80013-6" @default.
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