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• W2008051446 startingPage "094301" @default.
• W2008051446 abstract "Nanometer-scale, single-gate graphene nanoribbon Schottky barrier field-effect transistors (FETs) were theoretically investigated using self-consistent atomistic simulation. The device geometry was determined by referring to the International Technology Roadmap for Semiconductors. The target performance levels were the requirements specified in the roadmap for 2024, particularly a maximum leakage current of 0.1 A/m, an on-current of 2017 A/m, and a delay time of 0.13 ps. The device conditions needed to meet these requirements were found to be a bandgap larger than 1.1 eV, a supply voltage of 0.6 V, and a gate length of 7 nm." @default.
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• W2008051446 date "2013-08-27" @default.
• W2008051446 modified "2023-09-27" @default.
• W2008051446 title "Theoretical Investigation of Graphene Nanoribbon Field-Effect Transistors Designed for Digital Applications" @default.
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• W2008051446 doi "https://doi.org/10.7567/jjap.52.094301" @default.
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