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• W2008052188 abstract "An apparatus for ion-beam-sputtering is described which offers for the first time the possibility of measuring radiotracer diffusion profiles with mean diffusion length (D is the tracer diffusion coefficient and t is the diffusion time) in the nano- as well as in the micrometre range. It is also possible to use the device for ion milling, especially for the deposition of thin layers of radiotracer onto diffusion samples. Investigations of diffusion in pure metals, in a metallic glass, in a compound semiconductor and in intermetallic compounds are presented as examples." @default.
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• W2008052188 date "1996-04-01" @default.
• W2008052188 modified "2023-09-26" @default.
• W2008052188 title "A universal ion-beam-sputtering device for diffusion studies" @default.
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• W2008052188 doi "https://doi.org/10.1088/0957-0233/7/4/021" @default.
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