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- W2008075978 abstract "The carrier concentration and mobility, as determined from the Hall effect, have been analyzed using a computer for a series of $n$-type silicon samples doped with Sb, P, and As. Mobility calculations, performed numerically, were based on the general treatment given by Herring and Vogt. Ionized-impurity scattering was calculated from two theories and compared with experiment. Lattice-scattering parameters for intervalley and accoustic modes were determined from a comparison of the results between theory and experiment, using as many as four intervalley phonons. The conclusions support the earlier work of Long, and a partial explanation of the disagreement with parameters determined from other measurements is suggested. Scattering by neutral impurities is found to be temperature dependent, unlike the theoretical model of Erginsoy." @default.
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- W2008075978 date "1973-12-15" @default.
- W2008075978 modified "2023-09-23" @default.
- W2008075978 title "Impurity and Lattice Scattering Parameters as Determined from Hall and Mobility Analysis in<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mi>n</mml:mi></mml:math>-Type Silicon" @default.
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- W2008075978 doi "https://doi.org/10.1103/physrevb.8.5632" @default.
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