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- W2008149719 abstract "In this study, the reaction kinetics and material properties of polycrystalline CuGaSe2 thin films are reported. The films were prepared by the rapid thermal processing of thermally evaporated glass/Ga/Se/Cu//Ga/Se stacked precursors. In order to gain insight into the chalcopyrite formation process, stacked elemental layers with different Cu/Ga atomic ratios were annealed in an Ar/Se atmosphere under different thermal conditions. For typical annealing temperatures below 600°C, x-ray fluorescence studies indicated that a homogeneous element distribution could only be obtained for stoichiometric or near-stoichiometric samples. Systematic studies indicated that temperatures above 600°C are required in order to enhance the crystallinity and in-depth compositional uniformity of Ga-rich CuGaSe2 thin films. These results also highlighted the structural limitation of high gallium containing chalcopyrite thin films." @default.
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- W2008149719 date "2003-10-01" @default.
- W2008149719 modified "2023-09-27" @default.
- W2008149719 title "Material properties of CuGaSe2 absorber films prepared by rapid thermal annealing of stacked elemental layers" @default.
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- W2008149719 doi "https://doi.org/10.1088/0022-3727/36/20/016" @default.
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