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• W2008150518 abstract "Non-polar ZnO thin films were grown epitaxially on m-plane sapphire substrates using plasma-assisted molecular beam epitaxy. The film is (1 0 1¯ 0) oriented (m-plane) as identified by the X-ray diffraction pattern. The surface of ZnO film shows highly anisotropic morphology with stripes elongated along the c-axis. The nonintentionally doped non-polar ZnO film was grown under oxygen-rich condition, which exhibits weak p-type conductivity with a hole concentration of 1.3×1016 cm−3, a Hall mobility of 0.314 cm2 V−1 s−1, and a resistivity of 1536 Ω cm. Room-temperature photoluminescence of the p-type non-polar ZnO shows a strong UV emission at ∼3.307 eV and negligible deep level emission." @default.
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• W2008150518 date "2011-09-01" @default.
• W2008150518 modified "2023-10-04" @default.
• W2008150518 title "p-type non-polar m-plane ZnO films grown by plasma-assisted molecular beam epitaxy" @default.
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• W2008150518 doi "https://doi.org/10.1016/j.jcrysgro.2011.07.004" @default.
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