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- W2008163879 abstract "Exposure of a silicon surface to several reagent gases followed by laser vaporization produces unusual ions in addition to the silicon cluster ion (Si+n) distribution typical for clean silicon surfaces. The appearance of these ions is correlated to silicon surface reactions. Laser vaporization of silicon following exposure to the gases NH3, XeF2, CF3I, O2, NO, CH3OH, H2O, C2H4, D2, and CH4 has been studied. Changes in the relative intensities of product ions as a function of exposure are measured for some of the reagent gases. The results from laser vaporization/Fourier transform mass spectrometry (FTMS) are compared to studies of silicon surface reactions using other experimental techniques and to some secondary ion mass spectrometry (SIMS) results." @default.
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- W2008163879 date "1988-01-01" @default.
- W2008163879 modified "2023-09-27" @default.
- W2008163879 title "Laser vaporization /FTMS as a probe of silicon surface reactivity" @default.
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- W2008163879 doi "https://doi.org/10.1016/0039-6028(88)90597-3" @default.
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