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- W2008207858 abstract "We have developed an in situ method to measure the change in thickness of photoresist during development. The phase of a high frequency ultrasound signal is monitored as it is reflected from the silicon/photoresist interface during resist development. The method was tested using a 1.5 μm film of Shipley 1811 resist. The total phase change during development of 19° was consistent with theoretical calculations at 280 MHz, and this change was used to obtain the resist thickness during development. The method was used to find the development rate of this positive-tone resist as a function of exposure dose in the 20–68 mJ/cm2 range. As expected, there was an increase in development rate as the exposure time increased; this continued up to about 40 s of exposure, beyond which the rates were essentially unchanged. Measurements on a wafer with microelectronic devices ranging in topography from 0.10 to 1.0 μm show that the method is applicable to wafers with typical circuit topography." @default.
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- W2008207858 date "1998-10-12" @default.
- W2008207858 modified "2023-09-27" @default.
- W2008207858 title "In situ ultrasonic monitoring of photoresist development" @default.
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- W2008207858 doi "https://doi.org/10.1063/1.122427" @default.
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