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• W2008231617 abstract "The visible light emitted from GaAs-based transistors biased at high voltages has been studied and analysed. This hot-electron electroluminescence has been seen to offer a useful means for the study of high-field effects, device integrity, transport, real-space transfer and electron energy distributions. Examination of the lateral electroluminescence distribution reveals the electrical weak spots of a transistor and may indicate the presence of localized breakdown. Spectral measurements suggest that a number of mechanisms contribute to the visible light emission, including indirect intraband transitions and band-band recombination. A detailed study of the spectrum further allows analysis of the vertical carrier distribution, scattering direction and conduction electron temperature in a variety of transistor structures." @default.
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• W2008231617 date "1992-03-01" @default.
• W2008231617 modified "2023-10-06" @default.
• W2008231617 title "Hot-electron electroluminescence in GaAs transistors" @default.
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• W2008231617 doi "https://doi.org/10.1088/0268-1242/7/3/020" @default.
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