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• W2008237303 abstract "Tunnelling is a useful concept in nonadiabatic solid-electrolyte processes in cases where the barrier is sufficiently unambiguously characterized, such as electron transfer at film-covered metal electrodes and through the space charge layer of semiconductors. Direct tunnel processes exhibt several features different from electrochemical processes at both pure metal and semiconductor electrodes. Their applicability as a tool for investigation of the interface properties is, however, limited because of the wide energy distribution of contributing levels which smears out electronic and vibrational structure in the current-voltage relationship. On the other hand, tunnelling via discrete barrier or surface levels, coupled or uncoupled from nuclear modes, displays rapid changes at voltages which depend in a characteristic way on the localization of the levels. the electronic-nuclear coupling etc. Current-voltage relationships of these “assisted” processes therefore contain much more “spectroscopic” information about the barrier region than for direct processes. Recent experimental investigations of tunnel processes which exhibit several of the expected features are discussed." @default.
• W2008237303 created "2016-06-24" @default.
• W2008237303 creator A5065984968 @default.
• W2008237303 date "1980-12-01" @default.
• W2008237303 modified "2023-09-29" @default.
• W2008237303 title "Solid-electrolyte tunnelling" @default.
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• W2008237303 doi "https://doi.org/10.1016/0039-6028(80)90650-0" @default.
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