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- W2008256843 abstract "Gallium trichloride (GaCl 3 ) and azidotrimethylsilane (CH 3 ) 3 SiN 3 were employed as alternatives gallium and nitrogen precursors respectively in the growth of GaN nanowires via a metal-organic chemical vapor deposition (MOCVD) system. Au pre-deposition on Si (100) substrate was using as catalysis seed to grown of GaN nanowires. X-Ray, FE-SEM and AFM analyses reveal that nanowires grown at temperature 1050 C present morphology characteristic to model VLS. Scanning electron microscopy reveal a surface morphology made up of wurzite that suggests that wires growth involve a melting process. A nucleation and growth mechanism, involving the congruent melting clusters of precursor molecules on the hot substrate surface, is therefore invoked to explain these observations. We attributed the improved growth behavior to the nearer-to-equilibrium growth and may be close to local thermodynamic equilibrium." @default.
- W2008256843 created "2016-06-24" @default.
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- W2008256843 date "2014-02-27" @default.
- W2008256843 modified "2023-09-27" @default.
- W2008256843 title "Investigations into the Growth of GaN Nanowires by MOCVD Using Azidotrimethylsilane as Nitrogen Source" @default.
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- W2008256843 doi "https://doi.org/10.4028/www.scientific.net/amr.875-877.1483" @default.
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