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- W2008301722 abstract "The n+-InGaN/GaN short-period-superlattice (SPS) structures were applied on nitride-based blue light emitting diodes (LEDs) as tunneling layers. The ITO films combined with the n+-InGaN SPS tunneling layer could provide us an extremely high transparency (i.e. 93% at 465 nm) and a reasonably small 1.4 × 10−3 Ω cm2 specific contact resistance. The 20 mA forward voltage of the LED with ITO on n+-SPS upper contact was slightly higher than that of the LED with Ni/Au on n+-SPS upper contact, however, a 8.4 mW larger output power and 13.9% external quantum efficiency (Q.E.) could be obtained by using such an ITO on n+-SPS upper contact. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W2008301722 date "2003-11-24" @default.
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- W2008301722 title "High brightness InGaN/GaN LEDs with indium‐tin‐oxide as p‐electrode" @default.
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- W2008301722 doi "https://doi.org/10.1002/pssc.200303384" @default.
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