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• W2008306291 abstract "In this study, we simulate double-gate MOSFET using a 2-D direct Boltzmann transport equation solver. Simulation results are interpreted by quasi-ballistic theory. It is found that the relation between average carrier velocity at virtual source and back-scattering coefficient needs to be modified due to the oversimplified approximations of the original model. A 1-D potential profile model also needs to be extended to better determine the kT-layer length. The key expression for back-scattering coefficient is still valid, but a field-dependent mean free path is needed to be taken into account." @default.
• W2008306291 created "2016-06-24" @default.
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• W2008306291 date "2013-03-01" @default.
• W2008306291 modified "2023-10-16" @default.
• W2008306291 title "Simulation Study of Quasi-Ballistic Transport in Asymmetric DG-MOSFET by Directly Solving Boltzmann Transport Equation" @default.
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• W2008306291 doi "https://doi.org/10.1109/tnano.2013.2237924" @default.
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