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- W2008314621 abstract "Most aluminum (Al) in Al-contaminated and thermally oxidized n-type silicon (Si) dioxide (SiO2) is clarified to be segregated at the very top area of SiO2, causing a negative charge, as has been suggested by the formation of an (AlOSi)- network and/or AlO2- based on AC surface photovoltage (SPV). For a strongly inverted state at an oxidation temperature of 800 °C for 1 h, the thickness of the Al-induced negative charge region is quantitatively determined to be 2.4 nm on the basis of AC SPV after successive step etching and chemical analysis. As oxidation duration increased at 800 °C for 3 h, the strongly inverted state changed into a weakly inverted state, where the thickness of the Al-rich region is reduced (0.8 nm), proving that more than half of the (AlOSi)- network collapse and/or Al diffuses inside SiO2 during a longer oxidation duration." @default.
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- W2008314621 date "2007-11-06" @default.
- W2008314621 modified "2023-09-25" @default.
- W2008314621 title "Quantitative Estimation of Aluminum-Induced Negative Charge Region Top Area of SiO<sub>2</sub>Based on Frequency-Dependent AC Surface Photovoltage" @default.
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- W2008314621 doi "https://doi.org/10.1143/jjap.46.7297" @default.
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