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• W2008331424 abstract "Both Nd substituted and W doped bismuth titanate thin films were deposited by chemical solution deposition (CSD) technique on the (111)Pt/Ti/SiO2/(100)Si substrates. B-site doping with W6+, enhanced the remnant polarization and improved the fatigue property. Remnant polarization of Bi3.15Nd0.85Ti2.98W0.02O12 (BNTW) is 27 μ C/cm2, which is higher than that of Bi3.15Nd0.85Ti3O12 (BNT) deposited in the same condition. Good fatigue endurance was confirmed at 1 M Hz frequency up to 1010 switching cycles in both BNTW and BNT thin films. However, at the frequency of 50 kHz, the BNTW thin films show an improved fatigue property. W-doped effect is discussed." @default.
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• W2008331424 date "2004-01-01" @default.
• W2008331424 modified "2023-09-27" @default.
• W2008331424 title "Ferroelectric Properties of Both Nd Substituted and W Doped Bi4Ti3O12 Thin Films Deposited by Chemical Solution Deposition Technique" @default.
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• W2008331424 doi "https://doi.org/10.1080/10584580490892818" @default.
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