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- W2008362017 abstract "Al-doped ZnO (AZO) thin films oriented along the (0 0 2) plane have been prepared by the sol–gel process and their electrical and optical properties with post-deposition heating temperature were investigated. The preferred c-axis orientation along the (0 0 2) plane was enhanced with increasing post-deposition heating temperature and the surface of the films showed a uniform and nano-sized microstructure. The electrical resistivity of the films decreased from 73 to 22 Ω cm as the post-deposition heating temperature increased from 500 to 650 °C; however, the film postheated at 700 °C increased greatly to 580 Ω cm. The optical transmittance of the films postheated below 650 °C was over 86%, but it decreased at 700 °C. The electrical and optical properties of the AZO films with post-deposition heating temperature are discussed." @default.
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- W2008362017 date "2007-03-01" @default.
- W2008362017 modified "2023-10-18" @default.
- W2008362017 title "Electrical and optical properties of Al-doped ZnO thin films by sol–gel process" @default.
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- W2008362017 doi "https://doi.org/10.1016/j.apsusc.2006.10.068" @default.
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