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- W2008387859 abstract "The method of powder metallurgy for CdTe gives high possibilities for production of new type material structure and detector with picosecond time resolution, high radiation resistivity and electrical breakdown voltage. The method is simple, can be used for different semiconductors. The method forms a semiconductor structure with partly normalized destroyed grain boundary between powder particles which is characterized by extremely high concentration of deep level and traps. The heating and fast freezing are the main operation of this technological process. This method changes electro physical properties of monocrystalline CdTe and gives the new perspectives for development of semiconductor physics and technology." @default.
- W2008387859 created "2016-06-24" @default.
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- W2008387859 date "2000-12-18" @default.
- W2008387859 modified "2023-09-23" @default.
- W2008387859 title "<title>Method of powder metallurgy for compounds A<formula><sup><roman>11</roman></sup></formula>B<formula><sup><roman>V1</roman></sup></formula></title>" @default.
- W2008387859 doi "https://doi.org/10.1117/12.422168" @default.
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