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- W2008388545 abstract "A nondestructive evaluation technique based on the detection of the real part of the excess charge carrier wave by photoluminescence in a frequency range from 5 kHz up to 12 MHz is introduced for semiconductor defect analysis. Crystalline imperfections in silicon due to wafer manufacturing and processing are investigated and the results are correlated with those obtained from conventional photothermal measurements." @default.
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- W2008388545 date "1997-06-01" @default.
- W2008388545 modified "2023-09-25" @default.
- W2008388545 title "Analysis of subsurface damage in silicon by a combined photothermal and photoluminescence heterodyne measurement" @default.
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- W2008388545 doi "https://doi.org/10.1063/1.365351" @default.
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